GD3100: 绝缘栅双极晶体管(IGBT/SiC)的先进单通道栅极驱动器。

概述

特征

特征

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

GD3100 Product Image

GD3100 Product Image

Inverter Platform Live Demonstration

Inverter Platform Live Demonstration thumbnail

Get Started with FRDMGD3100HBIEVM Board

Get Started with FRDMGD3100HBIEVM Board thumbnail

Using SPIGen with the GD3100 Gate Driver

Using SPIGen with the GD3100 Gate Driver thumbnail

重要参数

  • Device Function
    HV Isolated IGBT & SiC Single gate driver IC
  • Load Current (IL) [TYP] (A)
    15
  • Number of Channels
    1
  • Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
    500
  • Load Supply Voltage (Min) (V)
    -12
  • Load Supply Voltage (Max) (V)
    25
  • Supply Voltage [min] (V)
    5, 6
  • Supply Voltage [max] (V)
    40
  • Interface and Input Control
    SPI / PWM
  • Ambient Operating Temperature (Min to Max) (℃)
    -40 to 125
.

适用于您应用的配套产品

GD3100 Reference Designs

EV Power Inverter Control Reference Platform – NXP’s EV Power Inverter Reference Platform targeting ISO 26262 ASIL D enables high-voltage power inverter control to drive electric vehicle traction motors and dc to dc converters.

3-Phase Reference Design for HybridPACKTM Drive IGBT/SiC Module featuring GD3100 – The RDGD3100I3PH5EVB is a fully functional three-phase Power Gate Drive reference design populated with six GD3100 gate drivers with fault management and supporting control circuitry.

3-Phase Reference Design for Fuji M653 IGBTs featuring GD3100 – RDGD3100F3PH5EVB is a power inverter reference design featuring the GD3100 advanced IGBT gate driver for high voltage 3-phase EV motor control.