绝缘栅双极晶体管(IGBT/SiC)的先进单通道栅极驱动器。

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GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

特征

适于任何IGBT/SiC模块的高度集成和灵活性

  • 电流信号隔离
  • 10 A开/关功率模块
  • 有源米勒钳位
  • 3.3或5.0 V I/O
  • 与200 - 1700 V IGBT/SiC兼容
  • 用于编程和诊断的SPI
  • 减少BOM成本和PCB尺寸

快速的过流和短路保护

  • 提供I-sense或DESAT sense
  • 二级关断
  • 软件关断

符合ISO26262 ASIL C/D功能安全要求(认证中)

  • VGE监控可验证PWM输入与门输出之间的通信
  • 故障安全引脚支持冗余栅极控制
  • 带循环冗余检查(CRC)的SPI安全设置
  • 强制的死区保护
  • 适用于模拟和数字电路的内建自测试(BIST)

重要参数

  • Device Function
    HV Isolated IGBT & SiC Single gate driver IC
  • Load Current (IL) [TYP] (A)
    15
  • Number of Channels
    1
  • Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
    500
  • Load Supply Voltage (Min) (V)
    -12
  • Load Supply Voltage (Max) (V)
    25
  • Supply Voltage [min] (V)
    5, 6
  • Supply Voltage [max] (V)
    40
  • Interface and Input Control
    SPI / PWM
  • Ambient Operating Temperature (Min to Max) (℃)
    -40 to 125

GD3100 Reference Designs

EV Power Inverter Control Reference Platform – NXP’s EV Power Inverter Reference Platform targeting ISO 26262 ASIL D enables high-voltage power inverter control to drive electric vehicle traction motors and dc to dc converters.

3-Phase Reference Design for HybridPACKTM Drive IGBT/SiC Module featuring GD3100 – The RDGD3100I3PH5EVB is a fully functional three-phase Power Gate Drive reference design populated with six GD3100 gate drivers with fault management and supporting control circuitry.

3-Phase Reference Design for Fuji M653 IGBTs featuring GD3100 – RDGD3100F3PH5EVB is a power inverter reference design featuring the GD3100 advanced IGBT gate driver for high voltage 3-phase EV motor control.

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