450-1500 MHz，10 W，28 V宽带射频功率LDMOS

MW6S010N 建议不要在新设计中使用该软件
MW6S010NR1和MW6S010GNR1专为频率高达1500 MHz的A类或AB类基站应用而设计。适用于模拟和数字调制及多载波放大器应用。

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产品详情

特征

  • 960 MHz时的典型双频性能：VDD = 28 V，IDQ = 125 mA，输出功率 = 10 W PEP
    功率增益：18 dB
    漏极效率：32%
    IMD：–37 dBc
  • 在28 Vdc，960 MHz，10 W连续波输出功率时，能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 片上射频反馈，实现宽带稳定性
  • 工作电压最高可达32 VDD
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范。
  • 采用盘卷包装。R1后缀 = 500个，24 mm卷带宽度，13英寸卷盘。
N true 0 PSPMW6S010Nzh 6 封装信息 Package Information t790 2 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 5 English The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 1151013916791725303927 PSP 742.7 KB None None documents None 1151013916791725303927 /docs/en/data-sheet/MW6S010N.pdf 742730 /docs/en/data-sheet/MW6S010N.pdf MW6S010N documents N N 2016-10-31 MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MW6S010N.pdf /docs/en/data-sheet/MW6S010N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 19, 2009 980000996212993340 Data Sheet Y N MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 封装信息 Package Information 2 5 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 6 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 MW6S010N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 5 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 6 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 数据手册 1 /docs/en/data-sheet/MW6S010N.pdf 2016-10-31 1151013916791725303927 PSP 1 Jun 19, 2009 Data Sheet The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. None /docs/en/data-sheet/MW6S010N.pdf English documents 742730 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MW6S010N.pdf MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MW6S010N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 5 N N MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs 742.7 KB MW6S010N N 1151013916791725303927 true Y Products

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封装信息 (2)
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