100W连续波,1.8-250MHz,50V LDMOS宽带射频功率晶体管

滚动图片以放大

产品详情

特性

  • 镜像引脚排列版本(A和B),以简化推挽、双上配置中的使用。
  • 电压范围为30至50V
  • 适合线性应用
  • 集成的ESD防护,带有增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 工业、科学和医疗(ISM)
    • 激光生成
    • 等离子蚀刻
    • 粒子加速器
    • MRI和其他医疗应用
    • 工业加热、焊接和干燥系统
  • 电台和VHF电视广播
  • HF和VHF通信
  • 开关电源

射频性能表

典型性能

VDD = 50Vdc
频率
(MHz)
信号类型 输出功率
(W)
Gps
(dB)
ηD
(%)
参考电路
零件编号
详细数据
13.56连续波130连续波27.179.6MRF101AN-13MHZ工具汇总页
27连续波125连续波24.979.6MRF101AN-27MHZ
40.68连续波120连续波23.881.5MRF101AN-40MHZ
50连续波119连续波22.882.1MRF101AN-50MHZ
81.36连续波130连续波23.280.8MRF101AN-81MHZ
87.5-108连续波115CW20.676.8MRF101AN-88MHZ
136-174连续波104连续波21.276.5MRF101AN-VHF
230脉冲
(100 µsec,20%占空比)
115峰值21.176.7MRF101AN-230MHZ

负载不匹配/耐用性

频率
(MHz)
信号类型 VSWR Pin
(dBm)
测试
电压
结果
40.68连续波> 65:1
所有相角
0.64CW50无器件退化
230脉冲
(100µsec,20%占空比)
>65:1
所有相角
1.8峰值
(3dB过驱)
50无设备退化

购买/参数










































































































N true 0 PSPMRF101ANzh 3 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 Japanese MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635ja PSP 856.2 KB None None documents None 1543555071358745152635 /docs/ja/data-sheet/MRF101AN.pdf 856202 /docs/ja/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/ja/data-sheet/MRF101AN.pdf /docs/ja/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 ja May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 1 English MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package 1543555071358745152635 PSP 856.2 KB None None documents None 1543555071358745152635 /docs/en/data-sheet/MRF101AN.pdf 856202 /docs/en/data-sheet/MRF101AN.pdf MRF101AN documents N N 2018-11-29 MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF101AN.pdf /docs/en/data-sheet/MRF101AN.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 14, 2019 980000996212993340 Data Sheet Y N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 3 A English TO-220-3, 98ASA01106D 1540565611197725645914 PSP 180.3 KB None None documents None 1540565611197725645914 /docs/en/package-information/SOT1937-1.pdf 180279 /docs/en/package-information/SOT1937-1.pdf sot1937-1 documents N N 2018-10-26 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf /docs/en/package-information/SOT1937-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 13, 2019 302435339416912908 Package Information Y N 98ASA01106D, TO-220-3 false 0 MRF101AN downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/SOT1937-1.pdf 2018-10-26 1540565611197725645914 PSP 3 Feb 13, 2019 Package Information TO-220-3, 98ASA01106D None /docs/en/package-information/SOT1937-1.pdf English documents 180279 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1937-1.pdf 98ASA01106D, TO-220-3 /docs/en/package-information/SOT1937-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N 98ASA01106D, TO-220-3 180.3 KB sot1937-1 N 1540565611197725645914 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/MRF101AN.pdf 2018-11-29 1543555071358745152635 PSP 1 May 14, 2019 Data Sheet MRF101AN, MRF101BN 100 W CW over 1.8-250 MHz, 50 V RF power transistor in TO-220-3 package None /docs/en/data-sheet/MRF101AN.pdf English documents 856202 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF101AN.pdf MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF101AN.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRF101AN, MRF100BN 100 W CW, 1.8-250 MHz, 50 V Data Sheet 856.2 KB MRF101AN N 1543555071358745152635 true Y Products

文档

快速参考恩智浦 文档类别.

3 文件

紧凑列表

设计文件

快速参考恩智浦 设计文件类型.

3 设计文件

硬件

快速参考恩智浦 板类型.

1 硬件产品

支持

您需要什么帮助?