470-960 MHz, 14 W平均值, 28 V, LDMOS宽带射频功率晶体管

MRFE6S9060NR1
不推荐用于新设计
MRFE6S9060NR1专为频率高达1000MHz的宽带商业和工业应用而设计。该器件具有高增益，宽带性能，适用于28V基站设备中的大信号共源放大器应用。

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产品详情

特性

  • 880 MHz时的典型单载波N–CDMA性能，VDD=28V，IDQ = 450mA，平均输出功率 = 14W，IS–95 CDMA (导频，同步，寻呼，流量代码8 - 13)信道带宽 = 1.2288MHz。PAR = 9.8dB @ 0.01% CCDF。
    功率增益：21.1 dB
    漏极效率：33%
    750kHz偏移时的ACPR：30kHz带宽时为–45.7dBc
  • 在32Vdc，880MHz，3dB过驱时，能承受10:1 VSWR，旨在增强耐用性。
    • GSM EDGE应用
  • 典型GSM EDGE性能：VDD = 28V，IDQ = 500mA，平均输出功率 = 21W，全频段(920–960MHz)
    功率增益：20dB
    漏极效率：46%
    400 kHz偏移时，频谱增生 = –62dBc
    600 kHz偏移时，频谱增生 = –78dBc
    EVM：1.5%rms
    • GSM应用
  • 典型GSM EDGE性能：VDD=28V，IDQ=500mA，输出功率=60W，全频段(920–960MHz)
    功率增益：20dB
    漏极效率：63%
  • 提供串联等效大信号阻抗参数
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个，24mm卷带宽度，13英寸卷盘。

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N true 0 PSPMRFE6S9060NR1zh 6 封装信息 Package Information t790 1 应用笔记 Application Note t789 3 手册 Brochure t518 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 1 English Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. 1191359103190703692478 PSP 589.9 KB None None documents None 1191359103190703692478 /docs/en/data-sheet/MRFE6S9060N.pdf 589864 /docs/en/data-sheet/MRFE6S9060N.pdf MRFE6S9060N documents N N 2016-10-31 MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET /docs/en/data-sheet/MRFE6S9060N.pdf /docs/en/data-sheet/MRFE6S9060N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Oct 19, 2007 980000996212993340 Data Sheet Y N MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 手册 Brochure 1 5 5 English This brochure provides information on NXP<sup>&#174;</sup> Semiconductors's RF high power transistors for broadcast communication systems. Engineered for FM, VHF and UHF transmitter equipment. Includes new VHV6 50 V LDMOS products ranging in power from 10 W to 1 kW. 1192155353926706448121 PSP 818.6 KB None None documents None 1192155353926706448121 /docs/en/brochure/BR1607.pdf 818601 /docs/en/brochure/BR1607.pdf BR1607 documents N N 2016-10-31 Broadcast Solutions /docs/en/brochure/BR1607.pdf /docs/en/brochure/BR1607.pdf Brochure N 712453003803778552 2022-12-07 pdf N en Sep 8, 2011 712453003803778552 Brochure Y N Broadcast Solutions 封装信息 Package Information 1 6 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 MRFE6S9060NR1 downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 6 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 手册 1 /docs/en/brochure/BR1607.pdf 2016-10-31 1192155353926706448121 PSP 5 Sep 8, 2011 Brochure This brochure provides information on NXP<sup>&#174;</sup> Semiconductors's RF high power transistors for broadcast communication systems. Engineered for FM, VHF and UHF transmitter equipment. Includes new VHV6 50 V LDMOS products ranging in power from 10 W to 1 kW. None /docs/en/brochure/BR1607.pdf English documents 818601 None 712453003803778552 2022-12-07 N /docs/en/brochure/BR1607.pdf Broadcast Solutions /docs/en/brochure/BR1607.pdf documents 712453003803778552 Brochure N en None Y pdf 5 N N Broadcast Solutions 818.6 KB BR1607 N 1192155353926706448121 数据手册 1 /docs/en/data-sheet/MRFE6S9060N.pdf 2016-10-31 1191359103190703692478 PSP 1 Oct 19, 2007 Data Sheet Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. None /docs/en/data-sheet/MRFE6S9060N.pdf English documents 589864 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6S9060N.pdf MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET /docs/en/data-sheet/MRFE6S9060N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET 589.9 KB MRFE6S9060N N 1191359103190703692478 true Y Products

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封装信息 (1)
应用笔记 (3)
手册 (1)
数据手册 (1)

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