1.8-500MHz，1500W连续波，50V LDMOS宽带射频功率晶体管

MRF1K50H 建议不要在新设计中使用该软件

滚动图片以放大

高度耐用的MRF1K50H器件，适用于高VSWR工业、科学和医疗应用，以及电台和VHF电视广播、sub-GHz航空航天和移动无线应用。此器件采用输入和输出未匹配设计，支持1.8-500MHz的更宽频率范围。

产品详情

特性

  • 高漏极源雪崩能量吸收能力
  • 非匹配的输入和输出
  • 器件可用于单端或推挽配置中
  • 电压范围为30至50V
  • 高耐用性。处理65:1 VSWR。
  • 符合RoHS规范
  • 推荐的驱动器：MRFE6VS25N (25W)
  • 提供更低的热阻部件：MRF1K50N
  • 工业、科学和医疗(ISM)
    • 激光生成
    • 等离子蚀刻
    • 粒子加速器
    • MRI、透热疗法、激光皮肤和磨削
    • 工业加热、焊接和干燥系统
  • 广播
    • 电台广播
    • VHF电视广播
  • 航空航天
    • VHF全向信标(VOR)
    • HF和VHF通信
    • 气象雷达
  • 移动无线设备
    • VHF和UHF基站

射频性能表

典型性能

VDD = 50Vdc
频率
(MHz)		 信号类型 输出功率
(W)		 Gps
(dB)		 ηD
(%)
27连续波1550连续波25.978.3
81.36(1)连续波1400连续波23.075.0
87.5-108(2,3)连续波1475连续波23.383.4
230(4)脉冲
（100 µsec，20%占空比）		1500峰值23.774.0
1. 数据来自81.36MHz窄带参考电路。
2. 数据来自87.5-108MHz宽带参考电路。
3. 显示的数值为指定频率范围内的中心频带性能数。
4. 数据来自230MHz的窄带生产测试装置。

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N true 0 PSPMRF1K50Hzh 6 封装信息 Package Information t790 1 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 白皮书 White Paper t530 1 zh zh zh 数据手册 Data Sheet 1 1 1.1 English MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1466819766532707018832 PSP 1.1 MB None None documents None 1466819766532707018832 /docs/en/data-sheet/MRF1K50H.pdf 1123487 /docs/en/data-sheet/MRF1K50H.pdf MRF1K50H documents N N 2017-01-12 MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50H.pdf /docs/en/data-sheet/MRF1K50H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 10, 2017 980000996212993340 Data Sheet Y N MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 4 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 封装信息 Package Information 1 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 白皮书 White Paper 1 6 1 English NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. 1486618696473728474245 PSP 414.0 KB None None documents None 1486618696473728474245 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 413950 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf rf-energy-in-medicine-white-paper documents N N 2017-02-08 RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Oct 19, 2017 918633085541740938 White Paper Y N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power false 0 MRF1K50H downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 4 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/MRF1K50H.pdf 2017-01-12 1466819766532707018832 PSP 1 Mar 10, 2017 Data Sheet MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRF1K50H.pdf English documents 1123487 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF1K50H.pdf MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF1K50H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1.1 N N MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet 1.1 MB MRF1K50H N 1466819766532707018832 白皮书 1 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 2017-02-08 1486618696473728474245 PSP 6 Oct 19, 2017 White Paper NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. None /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf English documents 413950 None 918633085541740938 2022-12-07 N /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf documents 918633085541740938 White Paper N en None Y pdf 1 N N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power 414.0 KB rf-energy-in-medicine-white-paper N 1486618696473728474245 true Y Products

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6 文件

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封装信息 (1)
应用笔记 (3)
数据手册 (1)
白皮书 (1)

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