1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET

MMRF1014N 建议不要在新设计中使用该软件
The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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特征

  • Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
    Power Gain: 18 dB
    Drain Efficiency: 33%
    IMD: –34 dBc
  • Typical Two-Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
    Power Gain: 19 dB
    Drain Efficiency: 33%
    IMD: –39 dBc
  • Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.
N true 0 PSPMMRF1014Nzh 3 封装信息 Package Information t790 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 1403203713099721353937 PSP 720.9 KB None None documents None 1403203713099721353937 /docs/en/data-sheet/MMRF1014N.pdf 720909 /docs/en/data-sheet/MMRF1014N.pdf MMRF1014N documents N N 2016-10-31 MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet /docs/en/data-sheet/MMRF1014N.pdf /docs/en/data-sheet/MMRF1014N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 24, 2014 980000996212993340 Data Sheet Y N MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 封装信息 Package Information 1 3 E English 98ASB15740C, 466-03, PLD-1.5 V1003176855715 PSP 51.5 KB None None documents None V1003176855715 /docs/en/package-information/98ASB15740C.pdf 51489 /docs/en/package-information/98ASB15740C.pdf SOT1811-1 documents N N 2016-10-31 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf /docs/en/package-information/98ASB15740C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins false 0 MMRF1014N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASB15740C.pdf 2016-10-31 V1003176855715 PSP 3 Mar 22, 2016 Package Information 98ASB15740C, 466-03, PLD-1.5 None /docs/en/package-information/98ASB15740C.pdf English documents 51489 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15740C.pdf 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins 51.5 KB SOT1811-1 N V1003176855715 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 数据手册 1 /docs/en/data-sheet/MMRF1014N.pdf 2016-10-31 1403203713099721353937 PSP 1 Jul 24, 2014 Data Sheet The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. None /docs/en/data-sheet/MMRF1014N.pdf English documents 720909 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1014N.pdf MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet /docs/en/data-sheet/MMRF1014N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet 720.9 KB MMRF1014N N 1403203713099721353937 true Y Products

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