150 W脉冲,频率为2700-3100 MHz,32 V Airfast® LDMOS射频功率晶体管

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产品详情

特征

  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 工作电压最高可达32 VDD
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 推荐的驱动器:AFIC31025N (25 W)
  • 包含在产品长期供货计划中,自推出后至少保证15年供货
  • 符合RoHS规范
  • 商用S频段雷达系统
  • 航海雷达
  • 气象雷达

射频性能表

典型性能

在2700-3100 MHz参考电路中,VDD = 32 Vdc
频率
(MHz)
信号类型 输出功率
(W)
Gps
(dB)
ηD
(%)
IRL
(dB)
2700-3100(1)脉冲(300 µsec,
15%占空比)
150峰值17.249.0–6

负载不匹配/耐用性

频率
(MHz)
信号类型 VSWR 输入功率
(W)
测试
电压
结果
3100(2)脉冲(300 µsec,
15%占空比)
10:1
所有相角
6.8峰值
(3 dB过驱)
32无器件退化
1. 显示的值为指定频率范围内的中心频段性能数。
2. 在3100 MHz的窄带生产测试装置上测量。

购买/参数










































































































N true 0 PSPAFT31150Nzh 5 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for S-Band radars. 1495921519707724513934 PSP 776.5 KB None None documents None 1495921519707724513934 /docs/en/data-sheet/AFT31150N.pdf 776541 /docs/en/data-sheet/AFT31150N.pdf AFT31150N documents N N 2017-05-27 AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet /docs/en/data-sheet/AFT31150N.pdf /docs/en/data-sheet/AFT31150N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 25, 2017 980000996212993340 Data Sheet Y N AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 5 D English 98ASA10831D, 2021-03, OM780-2 Straight Lead, OM-780-2L 1234532094722742938348 PSP 177.8 KB None None documents None 1234532094722742938348 /docs/en/package-information/98ASA10831D.pdf 177849 /docs/en/package-information/98ASA10831D.pdf SOT1823-1 documents N N 2016-10-31 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins /docs/en/package-information/98ASA10831D.pdf /docs/en/package-information/98ASA10831D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 8, 2019 302435339416912908 Package Information D N 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins false 0 AFT31150N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA10831D.pdf 2016-10-31 1234532094722742938348 PSP 5 Feb 8, 2019 Package Information 98ASA10831D, 2021-03, OM780-2 Straight Lead, OM-780-2L None /docs/en/package-information/98ASA10831D.pdf English documents 177849 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10831D.pdf 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins /docs/en/package-information/98ASA10831D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins 177.8 KB SOT1823-1 N 1234532094722742938348 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/AFT31150N.pdf 2017-05-27 1495921519707724513934 PSP 1 May 25, 2017 Data Sheet AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for S-Band radars. None /docs/en/data-sheet/AFT31150N.pdf English documents 776541 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT31150N.pdf AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet /docs/en/data-sheet/AFT31150N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet 776.5 KB AFT31150N N 1495921519707724513934 true Y Products

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