700 W脉冲，频率为1030-1090 MHz，52 V Airfast®LDMOS射频功率晶体管

AFV10700H
正常供应

滚动图片以放大

AFV10700H和AFV10700HS射频功率晶体管专为运行频率在1030至1090 MHz之间的脉冲应用而设计，可在降低功率的960至1215 MHz频段使用。这些器件适用于具有大占空比和长脉冲的防御和商用脉冲应用，如IFF、二级监视雷达，ADS-B转发器，DME等复杂脉冲链。

产品详情

特征

  • 内部匹配的输入和输出，支持宽带运营和易用性
  • 器件可用于单端、推挽或正交配置中
  • 工作电压最高可达55 VDD
  • 高耐用性，处理的VSWR > 20:1
  • 集成的ESD防护，带有增大负电压范围，改善C类放大器运行和栅电压脉冲
  • 推荐的驱动器：MRFE6VS25N (25 W) 或 MRF6V10010N (10 W)
  • 符合RoHS规范
  • 包含在产品长期供货计划中，自推出后至少保证15年供货

射频性能表

典型性能

在1030-1090 MHz参考电路中，IDQ(A+B) = 100 mA
频率
(MHz) (1)		 信号类型 VDD
(V)		 输出功率
(W)		 Gps
(dB)		 ηD
(%)
1030脉冲
(128 µsec，10%占空比)		50800峰值17.552.1
1090700峰值19.056.1
103052850峰值17.551.7
1090770峰值19.256.1

典型性能

在1030 MHz窄带生产测试电路中，IDQ(A+B) = 100 mA
频率
(MHz)		 信号类型 VDD
(V)		 输出功率
(W)		 Gps
(dB)		 ηD
(%)
1030 (2)脉冲
(128 µsec，10%占空比)		50730峰值19.258.5

窄带负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(W)		 测试
电压		 结果
1030 (2)脉冲
(128 µsec，10%占空比)		> 20:1 (所有相角)17.2峰值
(3 dB过驱)		50无器件退化
1. 在1030-1090 MHz参考电路中测量。
2. 在1030 MHz窄带测试电路中测量。

购买/参数

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N true 0 PSPAFV10700Hzh 5 封装信息 Package Information t790 3 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 2 English AFV10700H 700 W Pulse over 960-1215 MHz, 52 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for avionics applications 1496055876931728358095 PSP 2.5 MB None None documents None 1496055876931728358095 /docs/en/data-sheet/AFV10700H.pdf 2506696 /docs/en/data-sheet/AFV10700H.pdf AFV10700H documents N N 2017-05-29 AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet /docs/en/data-sheet/AFV10700H.pdf /docs/en/data-sheet/AFV10700H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Aug 8, 2019 980000996212993340 Data Sheet Y N AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 3 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L 4 A English 98ASA10793D, 465M-01, NI 780H-4L 1177631115779705085440 PSP 47.9 KB None None documents None 1177631115779705085440 /docs/en/package-information/98ASA10793D.pdf 47948 /docs/en/package-information/98ASA10793D.pdf SOT1827-1 documents N N 2016-10-31 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf /docs/en/package-information/98ASA10793D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10793D, NI-780H-4L 5 C English 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L 1385566997554703827666 PSP 47.2 KB None None documents None 1385566997554703827666 /docs/en/package-information/98ASA00238D.pdf 47244 /docs/en/package-information/98ASA00238D.pdf SOT1805-1 documents N N 2016-10-31 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L /docs/en/package-information/98ASA00238D.pdf /docs/en/package-information/98ASA00238D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L false 0 AFV10700H downloads zh-Hans true 1 Y PSP 封装信息 3 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 /docs/en/package-information/98ASA10793D.pdf 2016-10-31 1177631115779705085440 PSP 4 Mar 21, 2016 Package Information 98ASA10793D, 465M-01, NI 780H-4L None /docs/en/package-information/98ASA10793D.pdf English documents 47948 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10793D.pdf 98ASA10793D, NI-780H-4L /docs/en/package-information/98ASA10793D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA10793D, NI-780H-4L 47.9 KB SOT1827-1 N 1177631115779705085440 /docs/en/package-information/98ASA00238D.pdf 2016-10-31 1385566997554703827666 PSP 5 Feb 26, 2016 Package Information 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L None /docs/en/package-information/98ASA00238D.pdf English documents 47244 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00238D.pdf 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L /docs/en/package-information/98ASA00238D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L 47.2 KB SOT1805-1 N 1385566997554703827666 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/AFV10700H.pdf 2017-05-29 1496055876931728358095 PSP 1 Aug 8, 2019 Data Sheet AFV10700H 700 W Pulse over 960-1215 MHz, 52 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for avionics applications None /docs/en/data-sheet/AFV10700H.pdf English documents 2506696 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/AFV10700H.pdf AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet /docs/en/data-sheet/AFV10700H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet 2.5 MB AFV10700H N 1496055876931728358095 true Y Products

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