封装信息 (2)
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NI-780S-4L[98ASA10718D]
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98ASA10793D, NI-780H-4L[SOT1827-1]
设计文件
收到完整的详细信息。 请参阅产品足迹及更多信息 电子CAD文件.
紧凑列表
1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs
The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz.
NI-780H-4L, NI-780S-4L Package Image
产品详情
特征
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.
RF Performance Table
130, 230 MHz Broadband
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (100 µsec, 20% Duty Cycle) |
300 Peak | 230 | 26.5 | 74.0 | –16 |
| CW | 300 Avg. | 130 | 25.0 | 80.0 | –15 |
- Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
- 300 W CW Output Power
- 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
- Capable of 300 W CW Operation
