Model 20

设计中心
开发板与设计
模型和测试数据
- SiMKit
- MEXTRAM
- MODEL 20
- MODEL 31
- MODEL 40
- MODEL 9
- MODEL PSP
- MODELLA
- Advanced Diode model
- ASM-ESD
- Juncap
- Mextram
- Model 11
- Model 20
- Model 31
- Model 40
- Model 9
- Modella
- PSP模型
Model 20

MOS模型20是一个老式的紧凑型LDMOS模型，它结合了薄栅氧化层下沟道区和漂移区的MOSFET操作。因此，它是与MOS模型31串联的MOS模型9的升级产品或与MOS模型31串联的MOS模型11的升级产品。MOS模型20具有从沟道区到漂移区转换的电压(该模型本身可计算此电压)，在仿真期间改进了融合反应。该模型在SiMKit3.8之后已停产，因为恩智浦已经生产了更新的模型。

这些模型都包含在名为SiMKit的动态加载库中(直到SiMKit 3.8都可提供)。SiMKit与恩智浦使用的以下电路仿真器相关：

恩智浦的电路仿真器Pstar
Cadence的电路仿真器Spectre
Agilent的电路仿真器ADS

文档

快速参考恩智浦文档类别

8 文件

紧凑列表

Compact Modeling of High-Voltage LDMOS Devices Including Quasi-Saturation[01610925]

PDFOct 30, 2015版本更新 1
Capacitance modeling of laterally non-uniform MOS devices - Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International[01419281]

PDFOct 30, 2015版本更新 1
MOS model 20, level 2001[M2001]

PDFOct 30, 2015版本更新 1
MOS Model 20 Level 2001[PRTN2003_00301]

PDFOct 30, 2015版本更新 1
MOS model 20, level 2002[M2002]

PDFOct 30, 2015版本更新 1
New Fundamental Insights Into Capacitance Modeling of Laterally Nonuniform MOS Devices[01580864]

PDFOct 30, 2015版本更新 1
A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model[01424392]

PDFOct 30, 2015版本更新 1
MOS Model 20 Level 2002.2[PRTN2005_00406]

PDFOct 30, 2015版本更新 1

支持

您需要什么帮助?

近期查看的产品

There are no recently viewed products to display.

购物车

文档

过滤方式

支持信息 (8)

Compact Modeling of High-Voltage LDMOS Devices Including Quasi-Saturation[01610925]

Capacitance modeling of laterally non-uniform MOS devices - Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International[01419281]

MOS model 20, level 2001[M2001]

MOS Model 20 Level 2001[PRTN2003_00301]

MOS model 20, level 2002[M2002]

New Fundamental Insights Into Capacitance Modeling of Laterally Nonuniform MOS Devices[01580864]

A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model[01424392]

MOS Model 20 Level 2002.2[PRTN2005_00406]