面向带有GD3160功能的VE-Trac Drive SiC模块的3相参考设计

RDGD31603PHSEVM

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框图

GD3160结构框图

GD3160 Block Diagram

支持的器件

处理器和微控制器

超高可靠性的MPC57xx MCU

电源管理

动力和发动机控制

安全SBC

接口

3.3V/5V IO CAN收发器

Features

Gate Driver

  • Integrated Galvanic signal isolation (up to 8 kV)
  • High gate current integrated: 15 A source/sink capable
  • SPI interface for safety monitoring, configuration, and diagnostic reporting
  • Fail-safe state management from LV and HV domain for user-selectable safe state
  • Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
  • Configurable desaturation and current sense optimized for protecting SiC and IGBTs
  • Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
  • Integrated ADC for monitoring parameters from HV domain
  • CMTI > 100 V/ns
  • Available in 5.0 or 3.3 V logic interface variants
  • Certified compliant with ISO 26262, supporting ASIL D level functional safety

GD3160

  • Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

购买选项

RDGD31603PHSEVM-Image

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  • RDGD31603PHSEVM

  • 3-Phase Reference Design for VE-Trac Drive SiC Module Featuring GD3160.

  • CNY6,928.38
  • 数量为 1
    • 供货情况: 有货
    • 库存: 5
    • 配送: 正常情况下 1-2个工作日内发货
从恩智浦处购买从分销商处购买

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