1800-2200 MHz,6.3 W平均值,28 V Airfast®宽带集成射频LDMOS放大器

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产品详情

特征

  • 内置Doherty分路器和合成器
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 符合RoHS规范

射频性能表

1800 MHz

典型Doherty单载波W-CDMA特征性能:VDD = 28 Vdc,IDQ (载波) = 160 mA,VGS (峰值) = 2.15 Vdc,输出功率 = 6.3 W平均值,输入信号PAR = 9.9 dB @ 0.01% CCDF。 (1)
频率 Gps
(dB)
功率附加效率
(%)
ACPR
(dBc)
1805 MHz 28.7 38.1 –37.1
1840 MHz 28.7 39.1 –39.7
1880 MHz 28.7 39.0 –37.5

1800–2200 MHz

典型Doherty单载波W-CDMA性能:VDD = 28 Vdc,IDQ (载波) = 145 mA,VGS (峰值) = 2.20 Vdc,输出功率 = 6.3 W平均值,输入信号PAR = 9.9 dB @ 0.01% CCDF。 (1)
频率 Gps
(dB)
功率附加效率
(%)
ACPR
(dBc)
1800 MHz 28.3 37.3 –33.5
1900 MHz 28.4 38.0 –37.7
2000 MHz 28.7 37.6 –40.9
2100 MHz 29 38.0 –39.1
2200 MHz 29.0 37.6 –34.1
1. 所有数据均在一个装置中测量,器件焊接到散热器上。

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N true 0 PSPA3I20X050Nzh 5 应用笔记 Application Note t789 4 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 2 English A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations 1571803561592718714470 PSP 579.6 KB None None documents None 1571803561592718714470 /docs/en/data-sheet/A3I20X050N.pdf 579639 /docs/en/data-sheet/A3I20X050N.pdf A3I20X050N documents N N 2019-10-22 A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I20X050N.pdf /docs/en/data-sheet/A3I20X050N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 7, 2020 980000996212993340 Data Sheet Y N A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet 应用笔记 Application Note 4 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 5 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 false 0 A3I20X050N downloads zh-Hans true 1 Y PSP 应用笔记 4 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 4 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 5 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 数据手册 1 /docs/en/data-sheet/A3I20X050N.pdf 2019-10-22 1571803561592718714470 PSP 1 May 7, 2020 Data Sheet A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A3I20X050N.pdf English documents 579639 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3I20X050N.pdf A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3I20X050N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A3I20X050N 1800-2200 MHz, 6.3 W Avg, 28 V Data Sheet 579.6 KB A3I20X050N N 1571803561592718714470 true Y Products

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数据手册 (1)

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