Three-Phase Reference Design Kit for GD3130 Gate Driver EVB and Inverter Development

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RDGD31303PHG2EVB

RDGD31303PHG2EVB Block Diagram

Features

Integrated Gate Drive and System Features

  • GD3130 advanced single-channel gate drivers designed for insulated-gate bipolar transistor (IGBT) and SiC metal-oxide-semiconductor field-effect transistor (MOSFET)
  • Pinout compatible with the Infineon FS03MR12A7MA2B SiC power module
  • Integrated onboard, isolated flyback power supplies for the VCC, VEE rails, with Isolated GNDs
  • Desaturation (DESAT) short circuit protection
  • Daisy-chain serial peripheral interface (SPI) configuration
  • Compatible with KITGD31XXTREVM microcontroller (MCU) and translator board (not included), for full three-phase SPI communication and single-phase double-pulse and short-circuit test

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