设计文件
2 设计文件
-
模型
A3G20S350-01S S-Parameters
-
印刷电路板与电路图
A3G20S350-01S 2100 MHz PCB DXF file
2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor
A3G20S350-01S 接收通知
This A3G20S350-01S 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2110 to 2170 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-400S-2SA Package Image
产品详情
Features
- High terminal impedances for optimal broadband performance
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
部件编号包含： A3G20S350-01S.
RF Performance Table
2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 18.0 | 37.0 | 7.0 | –33.3 |
| 2140 MHz | 18.0 | 36.9 | 7.0 | –33.3 |
| 2170 MHz | 18.1 | 37.0 | 6.9 | –32.3 |