A5G18H610W19N 1805–1880MHz,85W平均值,48V Airfast®射频功率GaN晶体管

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产品详情

特性

  • 高终端阻抗,支持出色的宽带性能
  • 先进的高性能内部封装Doherty
  • 利用新一代信号提升线性化误差矢量幅值
  • 可承受极高的输出VSWR和宽带运行条件
  • 塑料封装
  • 符合RoHS规范

射频性能表

1800MHz

典型Doherty单载波W-CDMA参考电路性能:VDD=48Vdc,IDQA=300mA,VGSB=–5.4Vdc,平均输出功率=85W,输入信号PAR=9.9dB@0.01% CCDF。(1)

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N true 0 PSPA5G18H610W19Nzh 4 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 简介 Fact Sheet t523 1 zh zh zh 数据手册 Data Sheet 1 1 2.0 English A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations. 1699029200300716160382 PSP 541.5 KB None None documents None 1699029200300716160382 /docs/en/data-sheet/A5G18H610W19N.pdf 541488 /docs/en/data-sheet/A5G18H610W19N.pdf A5G18H610W19N documents N N 2023-11-03 A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G18H610W19N.pdf /docs/en/data-sheet/A5G18H610W19N.pdf Data Sheet N 980000996212993340 2025-02-05 pdf N en Jan 31, 2025 980000996212993340 Data Sheet Y N A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 简介 Fact Sheet 1 4 0 English NXP’s RF power macro GaN portfolio of high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. 1715966462702716336843 PSP 1.4 MB None None documents None 1715966462702716336843 /docs/en/fact-sheet/MACROGANFS.pdf 1360062 /docs/en/fact-sheet/MACROGANFS.pdf MACROGANFS documents N N 2024-05-17 RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet /docs/en/fact-sheet/MACROGANFS.pdf /docs/en/fact-sheet/MACROGANFS.pdf Fact Sheet N 736675474163315314 2024-05-17 pdf N en May 16, 2024 736675474163315314 Fact Sheet Y N RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet false 0 A5G18H610W19N downloads zh-Hans true 1 Y PSP 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/A5G18H610W19N.pdf 2023-11-03 1699029200300716160382 PSP 1 Jan 31, 2025 Data Sheet A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations. None /docs/en/data-sheet/A5G18H610W19N.pdf English documents 541488 None 980000996212993340 2025-02-05 N /docs/en/data-sheet/A5G18H610W19N.pdf A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G18H610W19N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2.0 N N A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet 541.5 KB A5G18H610W19N N 1699029200300716160382 简介 1 /docs/en/fact-sheet/MACROGANFS.pdf 2024-05-17 1715966462702716336843 PSP 4 May 16, 2024 Fact Sheet NXP’s RF power macro GaN portfolio of high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. None /docs/en/fact-sheet/MACROGANFS.pdf English documents 1360062 None 736675474163315314 2024-05-17 N /docs/en/fact-sheet/MACROGANFS.pdf RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet /docs/en/fact-sheet/MACROGANFS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 0 N N RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet 1.4 MB MACROGANFS N 1715966462702716336843 true Y Products

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数据手册 (1)
简介 (1)

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