2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain: 17.3 dB

Drain Efficiency: 32.5%

Device Output Signal PAR: 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power
Pout @ 1 dB Compression Point ≥ 110 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

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3 文件

^数据手册
MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

PDF版本 2Mar 31, 2011760.1 KBMRF7S21110H英语
^封装信息
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDF版本 JMar 22, 201643.5 KBSOT1793-1英语
^封装信息
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDF版本 HMar 22, 201644.1 KBSOT1792-1英语

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4 设计文件

^模型
MRF7S21110H, MRF7S21110HS RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:00342.1 KBMRF7S21110H_MDL_ADS

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^模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT

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^模型
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT

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^计算器
MRF7S21110HR3, MRF7S21110HSR3 RF Power Electromigration MTTF Calculation Program

XLS版本 0Aug 8, 2007 00:00:0045.1 KBMRF7S21110H_MTTF_CALC

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2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

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设计文件

过滤方式

MRF7S21110H, MRF7S21110HS RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF7S21110HR3, MRF7S21110HSR3 RF Power Electromigration MTTF Calculation Program

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