设计文件
3 设计文件
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模型
A3G18D510-04S Carrier Class AB S-Parameters
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模型
A3G18D510-04S Carrier Class C S-Parameters
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印刷电路板与电路图
A3G18D510-04S 2000 MHz PCB DXF file
This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
部件编号包含: A3G18D510-04S.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
1805 MHz | 16.0 | 54.3 | 8.0 | –26.4 |
1995 MHz | 16.8 | 52.2 | 7.8 | –31.9 |
2170 MHz | 15.4 | 53.9 | 7.6 | –33.8 |
快速参考 文档类别.
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