设计文件
1 设计文件
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印刷电路板与电路图
14 mm x 10 mm Module 30-Lead PCB DXF file
The A5M35TG040−TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field−proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems.
部件编号包含: A5M35TG040-TC.
Typical LTE Performance: Pout = 10.5 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)
Carrier Center Frequency | Gain (dB) | ACPR (dBc) | PAE (%) |
3410 MHz | 30.5 | –27.6 | 46.7 |
3500 MHz | 30.5 | –30.2 | 47.5 |
3590 MHz | 30.4 | –32.8 | 47.9 |
1. All data measured with device soldered in NXP reference circuit.
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