设计文件
3 设计文件
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模型
A5G38H055N Carrier Class AB S-Parameters
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模型
A5G38H055N Peaking Class AB S-Parameters
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模型
A5G38H055N Peaking Class C S-Parameters
3700-3980 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Transistor
A5G38H055N 接收通知
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3700 to 3980 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3700 to 3980 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
产品详情
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
部件编号包含： A5G38H055N.
RF Performance Table
3700–3980 MHz
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 45 mA, VGSB = –3.9 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
TD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3700 MHz | 14.7 | 55.5 | 8.5 | –29.5 | 3840 MHz | 14.9 | 53.2 | 8.5 | –35.0 |
| 3980 MHz | 14.7 | 53.0 | 8.2 | –33.4 |