3400-4000MHz，32dB，平均值9W Airfast®功放模块

A5M37TG240 正常供应

滚动图片以放大

A5M37TG240是完全集成的Doherty功率放大器模块，适用于要求小规格、高性能的无线基础设施应用。它适用于mMIMO系统、室外小型小区和低功耗射频拉远应用。该成熟的LDMOS和GaN功率放大器专为TDD LTE和5G系统而设计。

产品详情

特性

  • 2级模块解决方案，包括作为驱动器的LDMOS集成电路和GaN末级放大器
  • 先进的高性能内部封装Doherty
  • 完全匹配（50欧姆输入/输出，直流阻塞）
  • 适用于复杂度较低的数字线性化系统
  • 减少存储效应，提高线性化误差向量幅度
  • 支持高达530MHz的瞬时信号带宽

射频性能表

3400–4000MHz

典型LTE性能：Pout=9W (平均值)，VDC1=VDP1=5Vdc，VDC2=VDP2=48Vdc，1×20MHz LTE，输入信号PAR=8dB @ 0.01% CCDF。(1)

载波中心频率 增益(dB) ACPR (dBc) PAE (%)
3410MHz 32.6 –26.9 44.0
3500MHz 33.0 –26.2 45.5
3600MHz 33.0 –26.8 –46.8
3700MHz 32.9 –29.1 47.0
3800MHz 33.0 –32.6 –46.8
3900MHz 32.7 –36.1 46.1
3970MHz 32.2 –36.1 45.9
3990MHz 32.1 –35.9 45.8

1. 所有数据均使用焊接在恩智浦参考电路中的设备测量得出。

N true 0 PSPA5M37TG240zh 2 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Airfast<sup>&reg;</sup> power amplifier module designed for wireless infrastructure applications, including TDD LTE and 5G systems. 1711069422498720941209 PSP 734.1 KB None None documents None 1711069422498720941209 /docs/en/data-sheet/A5M37TG240.pdf 734057 /docs/en/data-sheet/A5M37TG240.pdf A5M37TG240 documents N N 2024-03-21 A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Data Sheet /docs/en/data-sheet/A5M37TG240.pdf /docs/en/data-sheet/A5M37TG240.pdf Data Sheet N 980000996212993340 2024-04-09 pdf N en Mar 19, 2024 980000996212993340 Data Sheet Y N A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note false 0 A5M37TG240 downloads zh-Hans true 1 Y PSP 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 数据手册 1 /docs/en/data-sheet/A5M37TG240.pdf 2024-03-21 1711069422498720941209 PSP 1 Mar 19, 2024 Data Sheet A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Airfast<sup>&reg;</sup> power amplifier module designed for wireless infrastructure applications, including TDD LTE and 5G systems. None /docs/en/data-sheet/A5M37TG240.pdf English documents 734057 None 980000996212993340 2024-04-09 N /docs/en/data-sheet/A5M37TG240.pdf A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Data Sheet /docs/en/data-sheet/A5M37TG240.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A5M37TG240 3400-4000 MHz, 32 dB, 9 W Avg Data Sheet 734.1 KB A5M37TG240 N 1711069422498720941209 true Y Products

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