3300-3670MHz,31dB,10.7W(平均值)Airfast®功放模块

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产品详情

特性

  • 2级模块解决方案,包括作为驱动器的LDMOS集成电路和GaN末级放大器
  • 先进的高性能内部封装Doherty
  • 热通路与电气/焊接连接通路分离,以增强散热效果
  • 完全匹配(50欧姆输入/输出,直流阻塞)
  • 适用于复杂度较低的数字线性化系统
  • 减少存储效应,提高线性化误差向量幅度
  • 符合RoHS规范

射频性能表

3300–3670MHz

典型LTE性能:Pout=10.7W(平均值),VDC1=VDP1=5Vdc,VDC2=VDP2=48Vdc,1×20MHz LTE,输入信号PAR=8dB @ 0.01% CCDF。(1)

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N true 0 PSPA5M34TG040-TCzh 2 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Airfast® power amplifier module designed for wireless infrastructure applications, including TDD LTE and 5G systems. 1712208807915719910839 PSP 758.0 KB None None documents None 1712208807915719910839 /docs/en/data-sheet/A5M34TG040-TC.pdf 757991 /docs/en/data-sheet/A5M34TG040-TC.pdf A5M34TG040-TC documents N N 2024-04-03 A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Data Sheet /docs/en/data-sheet/A5M34TG040-TC.pdf /docs/en/data-sheet/A5M34TG040-TC.pdf Data Sheet N 980000996212993340 2024-04-17 pdf N en Mar 13, 2024 980000996212993340 Data Sheet Y N A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note false 0 A5M34TG040-TC downloads zh-Hans true 1 Y PSP 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 数据手册 1 /docs/en/data-sheet/A5M34TG040-TC.pdf 2024-04-03 1712208807915719910839 PSP 1 Mar 13, 2024 Data Sheet A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Airfast® power amplifier module designed for wireless infrastructure applications, including TDD LTE and 5G systems. None /docs/en/data-sheet/A5M34TG040-TC.pdf English documents 757991 None 980000996212993340 2024-04-17 N /docs/en/data-sheet/A5M34TG040-TC.pdf A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Data Sheet /docs/en/data-sheet/A5M34TG040-TC.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A5M34TG040-TC 3300-3670 MHz, 31 dB, 10.7 W Avg Data Sheet 758.0 KB A5M34TG040-TC N 1712208807915719910839 true Y Products

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