50 V Airfast®射频功率LDMOS晶体管在850-950 MHz频率提供1050 W峰值功率

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产品详情

特征

  • 内部匹配的输入和输出,支持宽带运营和易用性
  • 设备可用于单端、推挽或正交配置中
  • 适用于50 V电压
  • 高耐用性,处理的VSWR > 20:1
  • 集成ESD防护,扩大了负电压范围,改善C类放大器运行和栅电压脉冲
  • 提供串联等效大信号阻抗参数
  • 符合RoHS规范
  • 陆基或海基超高频雷达

射频性能表

典型性能

VDD = 50 Vdc,IDQ(A+B) = 100 mA
频率
(MHz)
信号类型 输出功率
(W)
Gps
(dB)
ηD
(%)
950 脉冲
(100 μsec,20%占空比)
1050峰值 21.3 63.7

负载不匹配/耐用性

频率
(MHz)
信号类型 VSWR 输入功率
(W)
Gps
(dB)
ηD
(%)
950 脉冲
(100 μsec,20%占空比)
> 20:1 (所有相角) 15 W峰值(3 dB过驱) 50 无设备退化

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N true 0 PSPMMRF1050Hzh 3 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English MMRF1050H Airfast RF power LDMOS transistor designed for short pulse applications operating at frequencies from 850 to 950 MHz. 1613066524809722574998 PSP 429.0 KB None None documents None 1613066524809722574998 /docs/en/data-sheet/MMRF1050H.pdf 429011 /docs/en/data-sheet/MMRF1050H.pdf MMRF1050H documents N N 2021-02-11 MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet /docs/en/data-sheet/MMRF1050H.pdf /docs/en/data-sheet/MMRF1050H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Feb 9, 2021 980000996212993340 Data Sheet Y N MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 MMRF1050H downloads zh-Hans true 1 Y PSP 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/MMRF1050H.pdf 2021-02-11 1613066524809722574998 PSP 1 Feb 9, 2021 Data Sheet MMRF1050H Airfast RF power LDMOS transistor designed for short pulse applications operating at frequencies from 850 to 950 MHz. None /docs/en/data-sheet/MMRF1050H.pdf English documents 429011 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MMRF1050H.pdf MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet /docs/en/data-sheet/MMRF1050H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet 429.0 KB MMRF1050H N 1613066524809722574998 true Y Products

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