2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

MRF6P27160HR6

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特征

  • Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 14.6 dB
    Drain Efficiency: 22.6%
    ACPR @ 885 kHz Offset: –47.8 dBc in 30 kHz Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R6 suffix = 150 Units per 56 mm, 13 inch Reel.

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