900 MHz, 110 W, 26 V, GSM/EDGE Lateral N-Channel RF Power MOSFETs

The MRF9100LR3 and MRF9100LSR3 are designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment.