设计文件
1 设计文件
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计算器
MWIC930GNR1, MWIC930NR1 RF Power Electromigration MTTF Calculation Program
746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
MWIC930N 接收通知
- 存档
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The MWIC930NR1 and MWIC930GNR1 wideband integrated circuits are designed for CDMA and GSM/GSM EDGE applications. They use Our newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrate a multi–stage structure. Their wideband On-Chip integral matching circuitry makes them usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.
TO-272 Wide Body 16 Lead Iso of 1329 and 1329A
产品详情
特征
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Final Application
- Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA,
IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921–960 MHz)
- Power Gain: 30 dB
- Power Added Efficiency: 45%
Driver Application
- Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts,
IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency
Band (865–894 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain: 31 dB
- Power Added Efficiency: 21%
- ACPR @ 750 kHz Offset: –52 dBc in 30 kHz Bandwidth
- Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- On-Chip Current Mirror gm Reference FET for Self Biasing Application
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.