紧凑列表
728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor
- 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改，恕不另行通知。如需了解其他信息，请联系支持人员或您的销售代表。
The A2T08VD021N 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
产品详情
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 920 MHz | 19.3 | 21.3 | –43.4 |
| 940 MHz | 19.3 | 21.5 | –43.8 |
| 960 MHz | 19.1 | 21.1 | –43.9 |
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 728 MHz | 19.2 | 18.9 | –42.3 |
| 748 MHz | 19.2 | 19.2 | –42.6 |
| 768 MHz | 18.9 | 18.7 | –42.6 |