728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MDE6IC7120NR1 and MDE6IC7120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 728 to 768 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

数据手册

应用笔记

文档

快速参考恩智浦文档类别

6 文件

紧凑列表

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

PDFMar 18, 2016版本更新 E
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

PDFMar 18, 2016版本更新 E

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004版本更新 0

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004版本更新 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003版本更新 0

MDE6IC7120NR1, MDE6IC7120GNR1 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MDE6IC7120N]

PDFOct 29, 2009版本更新 0

设计资源

设计文件

快速参考恩智浦设计文件类型.

3 设计文件

收到完整的详细信息。 请参阅产品足迹及更多信息电子CAD文件.

模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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模型
MDE6IC7120N RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:001.12 MBMDE6IC7120N_MDL_ADS

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模型
MDE6IC7120NR1, MDE6IC7120GNR1 S-parameters

S2P版本 0Oct 15, 2009 00:00:0010.45 KBMDE6IC7120N_SP

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728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

文档

过滤方式

封装信息 (2)

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins[SOT1725-1]

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins[SOT1728-1]

工程设计要点 (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

应用笔记 (2)

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

数据手册 (1)

MDE6IC7120NR1, MDE6IC7120GNR1 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MDE6IC7120N]

MDE6IC7120NR1, MDE6IC7120GNR1 728-768 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

设计资源

设计文件

过滤方式

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MDE6IC7120N RF High-Power Model ADS Product Model Design Kit

MDE6IC7120NR1, MDE6IC7120GNR1 S-parameters

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