设计文件
收到完整的详细信息。 请参阅产品足迹及更多信息 电子CAD文件.
紧凑列表
3.5 GHz, 10 W, 12 V Power FET GaAs pHEMT
- 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改，恕不另行通知。如需了解其他信息，请联系支持人员或您的销售代表。
产品详情
特征
- Typical Single–Carrier W–CDMA Performance: VDD = 12
Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
- Power Gain: 10 dB
- Drain Efficiency: 25%
- ACPR @ 5 MHz Offset: –43 dBc in 3.84 MHz Channel Bandwidth
- 10 Watts P1dB @ 3550 MHz, CW
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
