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98ASB15926C, 301AP-02, 4 Pin Basestation Module[98ASB15926C]
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2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
| Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. |
The MHPA21010 is designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.