紧凑列表
1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
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The MRF7S18125AHR3 and MRF7S18125AHSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.