紧凑列表
1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
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The MRF18090AR3 is designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.