设计文件
2 设计文件
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模型
A2I09VD015N S-Parameters
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印刷电路板与电路图
A2I09VD015N 900 MHz PCB DXF file
575-960 MHz, 2 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier
A2I09VD015N 接收通知
The A2I09VD015N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
TO-270WB-15 and TO-270WBG-15 Package Image
产品详情
Features
- On-chip matching (50 ohm input, DC blocked)
- Integrated quiescent current temperature compensation with enable/disable function
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
部件编号包含： A2I09VD015GN, A2I09VD015N.
RF Performance Table
900 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
PAE (%) |
ACPR (dBc) |
| 920 MHz | 32.9 | 19.3 | –45.9 |
| 940 MHz | 33.0 | 19.7 | –45.5 |
| 960 MHz | 32.8 | 19.6 | –44.9 |