设计文件
2 设计文件
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模型
A3G20S250-01S S-Parameters
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印刷电路板与电路图
A3G20S250-01S 2000 MHz PCB DXF file
1800-2200 MHz, 45 W Avg., 48 V Airfast® RF Power GaN Transistor
A3G20S250-01S 接收通知
The A3G20S250-01S 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-400S-2SA Package Image
产品详情
Features
- High terminal impedances for optimal broadband performance
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
部件编号包含： A3G20S250-01S.
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 250 mA, Pout = 45 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 17.6 | 34.8 | 6.9 | –35.1 | –10 |
| 1990 MHz | 17.9 | 37.2 | 7.0 | –34.4 | –8 |
| 2170 MHz | 18.2 | 37.0 | 6.9 | –34.1 | –10 |