| Package Version | Package Name | 贴装 | 端子位置 | 封装风格 | 尺寸 | 終止計數 | 材料 |
|---|---|---|---|---|---|---|---|
| SOT1731-1 | FM2 | flange mount | double | DFM | 6.1 x 9.65 x 2.03 | 2 | plastic |
| 生产代码 | Reference Codes | Issue Date |
|---|---|---|
| 98ASA99301D | PDIP-G2(JEDEC | 2017-06-11 |
| 部分 | 描述 | Quick access |
|---|---|---|
| MMRF1304GN | Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | View parametrics |
| AFT09MS031GN | Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V | View parametrics |
| AFT05MS031GN | Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V | View parametrics |
| MW6S010GN | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
| A2T27S020GN | Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V | View parametrics |
| MMRF1004GN | GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | View parametrics |
| MMRF1015GN | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
| MRFE6VS25GN | Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | View parametrics |
| AFT20S015GN | Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V | View parametrics |